High quality ZnTe heteroepitaxy layers using low-temperature buffer layers

被引：13

作者：

Chang, JH

Godo, K

Song, JS

Oh, D

Lee, C

Yao, T

机构：

[1] Tohoku Univ, IMR, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, VBL, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

defect density; heteroepitaxy; molecular beam epitaxy; ZnTe thin films;

D O I：

10.1016/S0022-0248(03)00974-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Low dislocation density ZnTe heteroepitaxial layers are achieved by inserting a thin ZnTe buffer layer at low growth temperature (LT-buffer) followed by annealing. The ZnTe heteroepitaxy layer with a LT-buffer shows a narrow line width of X-ray rocking curve as narrow as 42 arcsec in (0 0 4) reflection and the dislocation density is estimated as 1.3 x 10(6) cm(-2). A cross-sectional view of transmission electron microscopy shows high structural quality of ZnTe layer with LT-buffers. (C) 2003 Elsevier Science B.V. All rights reserved.

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收藏

页码：596 / 601

页数：6

相关论文

共 20 条

[1] Stress and defect control in GaN using low temperature interlayers [J].

Amano, H ;

Iwaya, M ;

Kashima, T ;

Katsuragawa, M ;

Akasaki, I ;

Han, J ;

Hearne, S ;

Floro, JA ;

Chason, E ;

Figiel, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (12B) :L1540-L1542

[2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[3] THE MEASUREMENT OF THREADING DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS BY X-RAY-DIFFRACTION [J].

AYERS, JE .

JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) :71-77

[4] CHARACTERIZATION OF THIN-LAYERS ON PERFECT CRYSTALS WITH A MULTIPURPOSE HIGH-RESOLUTION X-RAY DIFFRACTOMETER [J].

BARTELS, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :338-345

[5]

CHANG JH, 2000, APPL PHYS LETT, V77

[6] DOUBLE-CRYSTAL SPECTROMETER MEASUREMENTS OF LATTICE-PARAMETERS AND X-RAY TOPOGRAPHY ON HETEROJUNCTIONS GAAS-ALXGA1-XAS [J].

ESTOP, E ;

IZRAEL, A ;

SAUVAGE, M .

ACTA CRYSTALLOGRAPHICA SECTION A, 1976, 32 (JUL1) :627-&

[7] ZNTE/GAAS(001) - GROWTH MODE AND STRAIN EVOLUTION DURING THE EARLY STAGES OF MOLECULAR-BEAM-EPITAXY HETEROEPITAXIAL GROWTH [J].

ETGENS, VH ;

SAUVAGESIMKIN, M ;

PINCHAUX, R ;

MASSIES, J ;

JEDRECY, N ;

WALDHAUER, A ;

TATARENKO, S ;

JOUNEAU, PH .

PHYSICAL REVIEW B, 1993, 47 (16) :10607-10612

[8] EFFECTS OF ZNSE BUFFER LAYER ON OPTICAL-PROPERTIES OF ZNTE GROWN ON GAAS [J].

IIDA, F ;

IMAI, K ;

KUMAZAKI, K .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :356-360

[9] Two-dimensional growth of InSb thin films on GaAs(111)A substrates [J].

Kanisawa, K ;

Yamaguchi, H ;

Hirayama, Y .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :589-591

[10] LATTICE STRAIN NEAR INTERFACE OF MBE-GROWN ZNTE ON GAAS [J].

KUMAZAKI, K ;

IIDA, F ;

OHNO, K ;

HATANO, K ;

IMAI, K .

JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :285-289