Rapid thermal metalorganic chemical vapor deposition of II-VI compounds

In this paper we analyze the potential benefits of rapid thermal processing combined with metalorganic chemical vapor deposition (RT-MOCVD) for II-VI compounds and review our first results of the application of RT-MOCVD to the growth of CdTe/CdZnTe, CdTe/HgCdTe and ZnTe/CdTe heterostructures. The RT-MOCVD growth of(1 1 1) CdTe and ZnTe was performed in the A.G. Associates Heatpulse CVD-800 (TM) system using a horizontal quartz reactor heated from both sides by tungsten-halogen lamps. The main features of RT-MOCVD of II-VI materials are: very high growth rates (up to 60 mu m/h for CdTe and 30 mu m/h for ZnTe); low point defect densities in the epilayers; more abrupt interfaces and less substrate surface degradation compared to conventional MOCVD. Potential of RT-MOCVD for MCT passivation has been shown. (C) 1998 Elsevier Science B.V. All rights reserved.