Structural and ferroelectric properties of Bi4-xYxTi3O12 films

被引：0

作者：

Ma, J ^{[1
]}

Lou, J ^{[1
]}

Su, D ^{[1
]}

Wu, XM ^{[1
]}

Song, CH ^{[1
]}

Lu, XM ^{[1
]}

Zhu, JS ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2004年 / 65卷

基金：

中国国家自然科学基金;

关键词：

Bi4-xYxTi3O12; ferroelectric properties; microstructure;

D O I：

10.1080/10584580490892872

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Yttrium-substituted Bi4-xYxTi3O12 (x = 0.00, 0.10, 0.30, 0.50, 0.75, 1.00) polycrystalline thin films were synthesized by metal-organic decomposition (MOD) method. Ferroelectric measurements revealed that the Bi4Ti3O12 films substituted by Y with appropriate ratios could have higher remnant polarization (Pr) and significantly improved fatigue behavior compared with BTO. The remnant polarization of the Bi3.50Y0.50Ti3O12 capacitor reached 10 muC/cm(2) at an applied field about 120 kV/cm with nearly fatigue free property up to 10(10) cycles. XRD patterns show a little impurity phases as well as Aurivillius phase in the crystallization process with different annealing temperature. Perhaps it induced the poor leakage current properties.

引用

页码：105 / 115

页数：11

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