Response spectra from mid- to far-infrared, polarization behaviors, and effects of electron numbers in quantum-dot photodetectors

被引：65

作者：

Aslan, B ^{[1
]}

Liu, HC ^{[1
]}

Korkusinski, M ^{[1
]}

Cheng, SJ ^{[1
]}

Hawrylak, P ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 04期

关键词：

Electron energy levels - Electron transitions - Infrared detectors - Light polarization - Photocurrents - Self assembly - Semiconducting gallium arsenide - Semiconducting indium compounds - Spectrum analysis;

D O I：

10.1063/1.1540728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoresponse characteristics of InAs/GaAs self-assembled quantum-dot infrared photodetectors in a wide spectral region from the mid- to far-infrared are reported. Clear polarization behaviors with a dominant P-polarized response in the mid-infrared and a strong S-response in the far infrared are shown. These behaviors can be qualitatively understood in view of the quantum-dot shape of a large in-plane diameter and a small height in the growth direction. With a set of three samples, effects of the number of electrons per dot on the spectra are investigated.

引用

页码：630 / 632

页数：3

共 13 条

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