Investigation of heat transfer and thermal stresses of novel thermal management system integrated with vapour chamber for IGBT power module

被引:53
作者
Chen, Yiyi [1 ]
Li, Bo [1 ]
Wang, Xin [1 ]
Yan, Yuying [1 ]
Wang, Yangang [2 ]
Qi, Fang [2 ]
机构
[1] Univ Nottingham, Fac Engn, Nottingham NG7 2RD, England
[2] Dynex Semicond Ltd, Doddington Rd, Lincoln LN6 3LF, England
关键词
IGBT power electronics; Electric vehicles; Phase change cooling; Vapour chamber; Thermal resistance; Thermal stress; Thermal fatigue; FATIGUE;
D O I
10.1016/j.tsep.2019.01.007
中图分类号
O414.1 [热力学];
学科分类号
摘要
Thermal stress in IGBT power module can lead to sever thermal reliability problems such as module deformation, performance degradation and even permanent damage. So, it is important to develop innovative and efficient IGBT cooling technologies. In this paper, a novel thermal management system is developed for cooling IGBT power module. The module is integrated with a vapour chamber-based heat sink to reduce thermal resistance and improve temperature uniformity significantly. 3D FEM modelling is conducted to investigate the effect of vapour chamber on temperature distribution, thermal stress, energy strain dissipation density and lifetime under power cycle. The simulation results show that the proposed thermal management system is superior to traditional cooling solution regarding cooling capacity, thermal stress, creep and plastic strain energy dissipation and thermal fatigue life. The study of failure mechanism of solder layer under power cycling suggests that creep causes the main is damage in the power cycling and cracks induced by thermal loading can be expected to initiate at the edge.
引用
收藏
页码:73 / 81
页数:9
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