Experimental study and modeling of the temperature dependence of soft breakdown conduction in ultrathin gate oxides

被引：5

作者：

Avellán, A ^{[1
]}

Miranda, E ^{[1
]}

Sell, B ^{[1
]}

Krautschneider, W ^{[1
]}

机构：

[1] Tech Univ Hamburg, Inst Mikroelektron, D-21071 Hamburg, Germany

来源：

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年

关键词：

D O I：

10.1109/RELPHY.2003.1197815

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：580 / 581

页数：2

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