24-GHz Low Noise Amplifier using Coplanar Waveguide Series Feedback in 130-nm CMOS

被引：3
|
作者：
Nguyen, Giang D. [1 ]
Chiu, Yun [1 ]
Feng, Milton [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5 | 2009年
关键词：
RF CMOS; low noise amplifier (LNA); CPW series feedback; drifting-dipole noise (DDN);
D O I：
10.1109/APMC.2009.5384403
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the design and implementation of an RF CMOS low noise amplifier (LNA) in a 130-nm CMOS technology for 24-GHz industrial, scientific, and medical (ISM) applications. The use of coplanar waveguide (CPW) structures as series feedback enables simultaneous noise and power matching, which is a fundamental trade-off in LNA design. Accurate high frequency noise modeling of nanometer MOSFETs using in-house high-field drifting-dipole noise (DDN) model is also introduced for first-pass silicon design. The LNA prototype shows a gain of 19 dB and a noise figure NF of 3.8 dB measured at 24 GHz while consuming 15 mW from a 1.2-V power supply.
引用
收藏
页码：1148 / 1151
页数：4
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