Reversible plasma switching in epitaxial BiFeO3 thin films

被引：17

作者：

Kim, Yunseok ^{[1
]}

Vrejoiu, Ionela ^{[1
]}

Hesse, Dietrich ^{[1
]}

Alexe, Marin ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Saale, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 20期

关键词：

annealing; bismuth compounds; epitaxial layers; ferroelectric switching; ferroelectric thin films; multiferroics; plasma materials processing;

D O I：

10.1063/1.3431585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reversible plasma switching in epitaxial multiferroic BiFeO3 thin films was directly observed and analyzed using piezoresponse force microscopy. The polarization could be reversibly switched using oxygen plasma and a subsequent thermal annealing treatment in vacuum, respectively. The domain wall velocity during plasma switching, estimated to about 10(-8) m/s, is much slower compared to the normal electrical switching, however a large area of square centimeter scale could be stably switched. The results demonstrate that reversible plasma switching can be achieved by oxygen plasma treatment and it can be a useful tool for an electrode-less control of ferroelectric switching on large area. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3431585]

引用

页数：3

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[21] BiFeO3 thin films prepared by MOCVD [J].

Kartavtseva, M. S. ;

Gorbenko, O. Yu. ;

Kaul, A. R. ;

Akbashev, A. R. ;

Murzina, T. V. ;

Fusil, S. ;

Barthelemy, A. ;

Pailloux, F. .

SURFACE & COATINGS TECHNOLOGY, 2007, 201 (22-23) :9149-9153

[22] Optical properties of integrated multiferroic BiFeO3 thin films for microwave applications [J].

Allibe, J. ;

Bougot-Robin, K. ;

Jacquet, E. ;

Infante, I. C. ;

Fusil, S. ;

Carretero, C. ;

Reverchon, J. -L. ;

Marcilhac, B. ;

Crete, D. ;

Mage, J. -C. ;

Barthelemy, A. ;

Bibes, M. .

APPLIED PHYSICS LETTERS, 2010, 96 (18)

[23] Thermooptic properties of epitaxial BiFeO3 films with different orientations [J].

Shima, Hiromi ;

Tsutsumi, Koichi ;

Suzuki, Michio ;

Tadokoro, Toshiyasu ;

Naganuma, Hiroshi ;

Okamura, Soichiro ;

Kamei, Toshihisa .

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[24] Effect of BaTiO3 buffer layer on multiferroic properties of BiFeO3 thin films [J].

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Joh, Young-Gull ;

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Lee, Jai-Yeoul ;

Zhu, Jinsong ;

Lee, Hee Young .

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[25] Domain growth dynamics in single-domain-like BiFeO3 thin films [J].

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[27] Improved ferroelectric behavior in (110) oriented BiFeO3 thin films [J].

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[28] Enhanced switching characteristics and piezoelectric response in epitaxial BiFeO3-TbMnO3 thin films [J].

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Yang, Ying ;

Yuan, Guoliang .

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[29] Polarization switching in quasiplanar BiFeO3 capacitors [J].

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[30] High-Quality Sputtered BiFeO3 for Ultrathin Epitaxial Films [J].

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