Reversible plasma switching in epitaxial BiFeO3 thin films

被引：17

作者：

Kim, Yunseok ^{[1
]}

Vrejoiu, Ionela ^{[1
]}

Hesse, Dietrich ^{[1
]}

Alexe, Marin ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Saale, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 20期

关键词：

annealing; bismuth compounds; epitaxial layers; ferroelectric switching; ferroelectric thin films; multiferroics; plasma materials processing;

D O I：

10.1063/1.3431585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reversible plasma switching in epitaxial multiferroic BiFeO3 thin films was directly observed and analyzed using piezoresponse force microscopy. The polarization could be reversibly switched using oxygen plasma and a subsequent thermal annealing treatment in vacuum, respectively. The domain wall velocity during plasma switching, estimated to about 10(-8) m/s, is much slower compared to the normal electrical switching, however a large area of square centimeter scale could be stably switched. The results demonstrate that reversible plasma switching can be achieved by oxygen plasma treatment and it can be a useful tool for an electrode-less control of ferroelectric switching on large area. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3431585]

引用

页数：3

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