Spin-dependent transport for a two-dimensional electron gas with magnetic barriers

被引：14

作者：

Wang Hai-Yan ^{[1
]}

Duan Zi-Gang ^{[2
]}

Liao Wen-Hu ^{[1
]}

Zhou Guang-Hui ^{[1
]}

机构：

[1] Hunan Normal Univ, Dept Phys, Changsha 410081, Hunan, Peoples R China

[2] Shenzhen Univ, Inst Optoelect, Shenzhen 518060, Peoples R China

来源：

CHINESE PHYSICS B | 2010年 / 19卷 / 03期

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

semiconductor; 2DEG; magnetic barriers; spin-dependent transport; SUPERLATTICES; POLARIZATION; RESISTANCE;

D O I：

10.1088/1674-1056/19/3/037301

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The spin-dependent conductance and magnetoresistance ratio (MRR) for a semiconductor heterostructures consisting of two magnetic barriers with different height and space have been investigated by the transfer-matrix method. It is shown that the splitting of the conductance for parallel and antiparallel magnetization configurations results in tremendous spin-dependent MRR, and the maximal MRRs reach 5300% and 3800% for the magnetic barrier spaces W = 81.3 and 243.9 nm, respectively. The obtained spin-filtering transport property of nanostructures with magnetic barriers may be useful to magnetic-barrier-based spintronics.

引用

页数：5

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