Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction

被引：2

作者：

Dorokhin, M. V. ^{[1
]}

Malysheva, E. I. ^{[1
]}

Zvonkov, B. N. ^{[1
]}

Zdoroveishchev, A. V. ^{[1
]}

Danilov, Yu. A. ^{[1
]}

Nikolichev, D. E. ^{[2
]}

Boryakov, A. V. ^{[2
]}

Zubkov, S. Yu. ^{[2
]}

机构：

[1] Lobachevsky State Univ Nizhni Novgorod, Tech Phys Res Inst, Nizhnii Novgorod 603950, Russia

[2] Lobachevsky State Univ Nizhni Novgorod, Res & Educ Ctr Phys Solid Nanostruct, Nizhnii Novgorod 603950, Russia

来源：

TECHNICAL PHYSICS | 2014年 / 59卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

GaAs; Remanent Magnetization; Circular Polarization; Magnetic Field Dependence; Spin Injection;

D O I：

10.1134/S1063784214120056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Circularly polarized electroluminescence from GaMnAs/n ++GaAs/n-GaAs/InGaAs/p-GaAs heterostructures is studied. A hysteresis-like magnetic field dependence of the degree of circular polarization can be attributed to the injection of spin-polarized electrons from the magnetized GaMnAs layer. This effect is observed in the temperature range 10-90 K.

引用

页码：1839 / 1843

页数：5

共 17 条

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