Bias dependent two-channel conduction in InAlN/AlN/GaN structures

被引：15

作者：

Leach, J. H. ^{[1
]}

Ni, X. ^{[1
]}

Li, X. ^{[1
]}

Wu, M. ^{[1
]}

Ozgur, U. ^{[1
]}

Morkoc, H. ^{[1
]}

Zhou, L. ^{[2
]}

Cullen, D. A. ^{[2
]}

Smith, D. J. ^{[2
]}

Cheng, H. ^{[3
]}

Kurdak, C. ^{[3
]}

Meyer, J. R. ^{[4
]}

Vurgaftman, I. ^{[4
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[3] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

[4] USN, Res Lab, Washington, DC 20375 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 08期

关键词：

MOBILITY;

D O I：

10.1063/1.3330627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Due to growth temperature differences during deposition of GaN heterostructures utilizing InAlN barriers, an inadvertent parasitic GaN layer can form in the InAlN barrier layer. In structures utilizing AlN spacer layers, this parasitic layer acts as a second conduction channel with a carrier density dependent upon polarization charges and lattice strain as well as the surface potential. The effect of an additional GaN spacer layer in InAlN/AlN/GaN structures is assessed using simulations, electron-microscopy observations, magnetoconductivity measurements with gated Hall bar samples, and with quantitative mobility spectrum analysis. We propose a possible formation mechanism for the parasitic layer, and note that although the additional unintended layer may have beneficial aspects, we discuss a strategy to prevent its occurrence. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3330627]

引用

页数：4

共 13 条

[1] InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess [J].

Alomari, M. ;

Medjdoub, F. ;

Carlin, J. -F. ;

Feltin, E. ;

Grandjean, N. ;

Chuvilin, A. ;

Kaiser, U. ;

Gaquiere, C. ;

Kohn, E. .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (11) :1131-1133

[2] ALLOY-SCATTERING DEPENDENCE OF ELECTRON-MOBILITY IN THE TERNARY GALLIUM, INDIUM, AND ALUMINUM NITRIDES [J].

CHIN, VWL ;

ZHOU, B ;

TANSLEY, TL ;

LI, X .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (11) :6064-6066

[3] Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al2O3 Passivation [J].

Chung, Jinwook W. ;

Saadat, Omair I. ;

Tirado, Jose M. ;

Gao, Xiang ;

Guo, Shiping ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (09) :904-906

[4] High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures [J].

Gonschorek, M. ;

Carlin, J-F. ;

Feltin, E. ;

Py, M. A. ;

Grandjean, N. .

APPLIED PHYSICS LETTERS, 2006, 89 (06)

[5] Power electronics on InAlN/(In)GaN:: Prospect for a record performance [J].

Kuzmík, J .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (11) :510-512

[6] Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates [J].

Leach, J. H. ;

Wu, M. ;

Ni, X. ;

Li, X. ;

Xie, J. ;

Ozgur, U. ;

Morkoc, H. ;

Paskova, T. ;

Preble, E. ;

Evans, K. R. ;

Lu, Chang-Zhi .

APPLIED PHYSICS LETTERS, 2010, 96 (10)

[7] Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures [J].

Leach, J. H. ;

Wu, M. ;

Ni, X. ;

Li, X. ;

Ozgur, U. ;

Morkoc, H. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (01) :211-216

[8]

Medjdoub F, 2006, INT EL DEVICES MEET, P673

[9]

Morkoc H., 2008, Handbook of Nitride Semiconductors and Devices: Electronic and Optical Processes in Wide Band Gap Semiconductors, V2

[10] Nitride-based high electron mobility transistors with a GaN spacer [J].

Palacios, T. ;

Shen, L. ;

Keller, S. ;

Chakraborty, A. ;

Heikman, S. ;

DenBaars, S. P. ;

Mishra, U. K. ;

Liberis, J. ;

Kiprijanovic, O. ;

Matulionis, A. .

APPLIED PHYSICS LETTERS, 2006, 89 (07)

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