Analysis and Design of a CMOS UWB LNA With Dual-RLC-Branch Wideband Input Matching Network

被引：134

作者：

Lin, Yo-Sheng ^{[1
]}

Chen, Chang-Zhi ^{[1
]}

Yang, Hong-Yu ^{[1
]}

Chen, Chi-Chen ^{[1
]}

Lee, Jen-How ^{[1
]}

Huang, Guo-Wei ^{[2
]}

Lu, Shey-Shi ^{[3
,4
]}

机构：

[1] Natl Chi Nan Univ, Dept Elect Engn, Puli 545, Taiwan

[2] Natl Nano Device Labs, Hsinchu 300, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[4] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2010年 / 58卷 / 02期

关键词：

CMOS; inductive peaking; LC load; low-noise amplifier (LNA); quality factor (Q factor); resistive feedback; ultra-wideband (UWB); LOW-NOISE AMPLIFIER;

D O I：

10.1109/TMTT.2009.2037863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wideband low-noise amplifier (LNA) based on the current-reused cascade configuration is proposed. The wideband input-impedance matching was achieved by taking advantage of the resistive shunt-shunt feedback in conjunction with a parallel LC load to make the input network equivalent to two parallel-branches, i.e., a second-order wideband bandpass filter. Besides, both the inductive series- and shunt-peaking techniques are used for bandwidth extension. Theoretical analysis shows that both the frequency response of input matching and noise figure (NF) can be described by second-order functions with quality factors as parameters. The CMOS ultra-wideband LNA dissipates 10.34-mW power and achieves S-11 below -8.6 dB, S-22 below -10 dB, S-12 below -26 dB, flat S-21 of 12.26 +/- 0.63 dB, and flat NF of 4.24 +/- 0.5 dB over the 3.1-10.6-GHz band of interest. Besides, good phase linearity property (group-delay variation is only +/- 22 ps across the whole band) is also achieved. The analytical, simulated, and measured results agree well with one another.

引用

页码：287 / 296

页数：10

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