RF Receiver Front-End with+3dBm out-of-band IIP3 and 3.4dB NF in 45nm CMOS for 3G and beyond

被引：0

作者：

Yanduru, Naveen K. ^{[1
]}

Griffith, Danielle ^{[1
]}

Low, Kah-Mun ^{[1
]}

Balsara, Poras T. ^{[2
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

[2] Univ Texas Dallas, Richardson, TX 75080 USA

来源：

RFIC: 2009 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM | 2009年

关键词：

45; nm; CMOS; RIF receivers; WCDMA;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A receiver front-end in standard 45 nm CMOS technology is presented. The receiver achieves WCDMA system performance without requirement for an inter-stage SAW filter. High out-of-band linearity performance is achieved by reducing the RF circuitry and filtering the out-of-band blockers after direct conversion. For the receiver at 1.9 GHz, a +3.1 dBm IIP3 is achieved for blockers at 40 MHz and 80 MHz away from the RF carrier. NF is 3.4 dB, out-of-band IIP2 is +51 dBm and current is 19.5 mA for both 1, Q channels with VDD of 1.4 V. LO is provided using an on-chip VCO followed by a quadrature divider.

引用

页码：3 / +

页数：2