Hole levels in InAs self-assembled quantum dots

被引：15

作者：

Blokland, J. H.

Wijnen, F. J. P.

Christianen, P. C. M.

Zeitler, U.

Maan, J. C.

机构：

[1] Radboud Univ Nijmegen, High Field Magnet Lab, Inst Mol & Mat, NL-6525 ED Nijmegen, Netherlands

[2] Ruhr Univ Bochum, Lehrstuhl Angewandte Festkorperphys, D-44799 Bochum, Germany

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.75.233305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We measure the energy levels and charging spectra of holes in self-assembled InAs quantum dots using capacitance-voltage and polarized photoluminescence spectroscopy in high magnetic fields. The pronounced circular polarization of the optical emission, together with the optical selection rules for orbital and spin quantum numbers, allows us to separate the individual electron and hole levels. The magnetic field dependence of the single-particle hole energy levels can be understood by considering a spin-orbit coupled valence band and agrees well with the observed behavior of the charging peaks in the capacitance-voltage spectra.

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页数：4

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