Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

被引：51

作者：

Bouaziz, Jordan ^{[1
,2
]}

Romeo, Pedro Rojo ^{[1
]}

Baboux, Nicolas ^{[2
]}

Vilquin, Bertrand ^{[1
]}

机构：

[1] Univ Lyon, Ecole Cent Lyon, CNRS, Inst Nanotechnol Lyon,UMR5270, 36 Ave Guy Collongue, F-69134 Ecully, France

[2] Univ Lyon, CNRS, Inst Nanotechnol Lyon, INSA,UMR5270, F-69621 Villeurbanne, France

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2019年 / 1卷 / 09期

基金：

欧盟地平线“2020”;

关键词：

HfO2; ZrO2; HZO; ferroelectricity; wake-up effect; FRAM; SWITCHING ENDURANCE;

D O I：

10.1021/acsaelm.9b00367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The wake-up effect is a major issue for ferroelectric HfO2-based memory devices. Here, two TiN/HZO/TiN structures deposited by magnetron sputtering on silicon are compared. The maximum remanant polarization is higher than 21 mu C/cm(2) for both samples, but a strong difference is observed in the electrical behavior. For the mesa sample, the difference between the maximum and initial remanent polarization is only 3 mu C/cm(2), whereas it is around 14 mu C/cm(2) in the non-mesa case. We discuss the root causes of these behaviors in light of GIXRD results.

引用

页码：1740 / 1745

页数：11

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