Electronic transport in thin films of BaPbO3: Unraveling two-dimensional quantum effects

被引:2
作者
Seiler, P. [1 ]
Bartel, R. [1 ]
Kopp, T. [1 ]
Hammerl, G. [1 ]
机构
[1] Univ Augsburg, Inst Phys, Ctr Elect Correlat & Magnetism, Expt Phys 6, D-86135 Augsburg, Germany
关键词
WEAK-LOCALIZATION; MAGNETORESISTANCE; FLUCTUATION; CONDUCTIVITY; DECOHERENCE; RESISTANCE; INTERFACE; INSULATOR; SURFACES; METAL;
D O I
10.1103/PhysRevB.100.165402
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, perovskite-related BaPbO3 has attracted attention due to its hidden topological properties and, moreover, has been used as a thin layer in heterostructures to induce two-dimensional superconductivity. Here we investigate the normal-state electronic transport properties of thin films of BaPbO3. Temperature- and magneticfield-dependent sheet resistances are strongly affected by two-dimensional quantum effects. Our analysis decodes the interplay of spin-orbit coupling, disorder, and electron-electron interaction in this compound. Like for recently discussed topological materials, we find that weak antilocalization is the dominant protagonist in magnetotransport, whereas electron-electron interactions play a pronounced role in the temperature dependence. A systematic understanding of these quantum effects is essential to allow for accurate control of properties not only of thin films of BaPbO3 but also of topological heterostructures.
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页数:8
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