Low-temperature resistivity of YBa2Cu3O6+x single crystals in the normal state

被引:14
作者
Gantmakher, VF [1 ]
Pushin, DA [1 ]
Shovkun, DV [1 ]
Tsydynzhapov, GE [1 ]
Kozeeva, LP [1 ]
Lavrov, AN [1 ]
机构
[1] RUSSIAN ACAD SCI,INST INORGAN CHEM,NOVOSIBIRSK 630090,RUSSIA
关键词
D O I
10.1134/1.567439
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A scan of the superconductor-nonsuperconductor transformation in single crystals of YBa2Cu3O6+x (x approximate to 0.37) is done in two alternative ways, namely, by applying a magnetic field and by reducing the hole concentration through oxygen rearrangement. The in-plane normal-state resistivity rho(ab) Obtained in the two cases is quite similar; its temperature dependence can be fitted by a logarithmic law in a temperature range of almost two decades. However, an alternative representation of the temperature dependence of sigma(ab) = 1/rho(ab) by a power law, typical for a 3D material near a metal-insulator transition, is also plausible. The vertical conductivity sigma(c) = 1/p(c) followed a power law, and neither sigma(c)(T), nor rho(c)(T) could be fitted by log T. It follows from the rho(c) measurements that the transformation at T = 0 is split into two transitions: superconductor- normal-metal and normal-metal-insulator. In our samples, they are separated in oxygen content by Delta x approximate to 0.025. (C) 1997 American Institute of Physics.
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页码:870 / 876
页数:7
相关论文
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[21]   DEPENDENCE OF HOLE CONCENTRATION ON OXYGEN VACANCY ORDER IN YBA2CU3O7-DELTA - A CHEMICAL VALENCE MODEL [J].
VEAL, BW ;
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PHYSICA C, 1991, 184 (4-6) :321-331