Gate-induced floating body effect excess noise in partially depleted SOI MOSFETs

被引：32

作者：

Dieudonné, F ^{[1
]}

Jomaah, J ^{[1
]}

Balestra, F ^{[1
]}

机构：

[1] ENSERG, IMEP, F-38016 Grenoble 1, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 12期

关键词：

floating body effects (FBE); gate tunneling; low frequency noise (LFN); partially depleted (PD); silicon-on-insulator (SOI);

D O I：

10.1109/LED.2002.805746

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low frequency excess noise associated to gate-induced floating body effect is for the first time reported in Partially Depleted SOI MOSFETs with ultrathin gate oxide. This was investigated with respect to floating body devices biased in linear regime. Due, to a body charging from the gate, a Lorentzian-like noise component superimposes to the conventional 1/f noise spectrum. This excess noise exhibits the same behavior as the Kink-related excess noise previously observed in Partially Depleted devices in saturation regime.

引用

页码：737 / 739

页数：3

共 7 条

[1] Impact of gate direct tunneling current on circuit performance: A simulation study [J].