CMP characteristics and polishing machine in ILD planarization

被引：0

作者：

Watanabe, J ^{[1
]}

Inamura, T ^{[1
]}

Beppu, T ^{[1
]}

Minamikawa, Y ^{[1
]}

机构：

[1] Nagoya Inst Technol, Showa Ku, Nagoya, Aichi 466, Japan

来源：

ADVANCES IN ABRASIVE TECHNOLOGY | 1997年

关键词：

D O I：

暂无

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

CMP characteristics in inter-layer-dielectric(ILD) film planarization polishing were investigated using a specialized model machine. Polishing rate is increased by increasing the real contact points between wafer surface and pad surface. Polishing mechanism of thermal oxide is related to silanol groups of the chemical reaction products with alkaline solvent. The polishing pressure distributions under supposed static loads were calculated by finite element method for various polishing pad systems. The practical polishing machine for planarization of ILD was designed and developed. The non-uniformity of polished thickness in g-in. wafer was below 5% in 1 sigma.

引用

页码：66 / 70

页数：5