Switching performance comparison between conventional SOT and STT-SOT write schemes with effect of shape deformation

被引：6

作者：

Byun, J. ^{[1
]}

Kang, D. H. ^{[1
]}

Shin, M. ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea

来源：

AIP ADVANCES | 2021年 / 11卷 / 01期

关键词：

Deformation;

D O I：

10.1063/9.0000116

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate the effect of shape deformation in spin-orbit torque magnetoresistive random access memory (SOT-MRAM) based on micromagnetic simulation by generating 1000 randomly deformed samples using the exponentially decaying autocorrelation function. The conventional in-plane magnetic field-assisted SOT write scheme and the recently proposed spin-transfer torque-spin-orbit torque (STT-SOT) hybrid write scheme were simulated and compared with the effect of the Gilbert damping constant (alpha) considered in the presence and the absence of the Dzyaloshinskii-Moriya interaction (DMI). We found that shape deformation of the MTJ can result in write failure or degradation of the switching time. To compensate the device-to-device performance variation induced by the shape deformation, the condition of high alpha and the presence of the DMI is desired for the magnetic field-assisted write scheme. The STT-SOT shows slight improvement in the switching performance for larger alpha and the presence of DMI while it retains 100% switching probability even with small alpha regardless of the DMI.

引用

页数：5

共 26 条

[1] 2 MB Array-Level Demonstration of STT-MRAM Process and Performance Towards L4 Cache Applications [J].

Alzate, J. G. ;

Arslan, U. ;

Bai, P. ;

Brockman, J. ;

Chen, Y. J. ;

Das, N. ;

Fischer, K. ;

Ghani, T. ;

Heil, P. ;

Hentges, P. ;

Jahan, R. ;

Littlejohn, A. ;

Mainuddin, M. ;

Ouellette, D. ;

Pellegren, J. ;

Pramanik, T. ;

Puls, C. ;

Quintero, P. ;

Rahman, T. ;

Sekhar, M. ;

Sell, B. ;

Seth, M. ;

Smith, A. J. ;

Smith, A. K. ;

Wei, L. ;

Wiegand, C. ;

Golonzka, O. ;

Hamzaoglu, F. .

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2019,

[2] Modeling and characterization of contact-edge roughness for minimizing design and manufacturing variations [J].

Ban, Yongchan ;

Ma, Yuansheng ;

Levinson, Harry J. ;

Pan, David Z. .

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2010, 9 (04)

[3] A Novel Low Power and Reduced Transistor Count Magnetic Arithmetic Logic Unit Using Hybrid STT-MTJ/CMOS Circuit [J].

Barla, Prashanth ;

Joshi, Vinod Kumar ;

Bhat, Somashekara .

IEEE ACCESS, 2020, 8 :6876-6889

[4]

Baumgartner M, 2017, NAT NANOTECHNOL, V12, P980, DOI [10.1038/nnano.2017.151, 10.1038/NNANO.2017.151]

[5] Field-free spin-orbit torque switching of a perpendicular ferromagnet with Dzyaloshinskii-Moriya interaction [J].

Chen, BingJin ;

Lourembam, James ;

Goolaup, Sarjoosing ;

Lim, Sze Ter .

APPLIED PHYSICS LETTERS, 2019, 114 (02)

[6] Magnetization Switching of a Thin Ferromagnetic Layer by Spin-Orbit Torques [J].

Chen, BingJin ;

Ter Lim, Sze ;

Tran, Michael .

IEEE MAGNETICS LETTERS, 2016, 7

[7] Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction [J].

Cubukcu, Murat ;

Boulle, Olivier ;

Drouard, Marc ;

Garello, Kevin ;

Avci, Can Onur ;

Miron, Ioan Mihai ;

Langer, Juergen ;

Ocker, Berthold ;

Gambardella, Pietro ;

Gaudin, Gilles .

APPLIED PHYSICS LETTERS, 2014, 104 (04)

[8]

Donahue M, 1999, 6376 NISTIR

[9] Quantifying interface and bulk contributions to spin-orbit torque in magnetic bilayers [J].

Fan, Xin ;

Celik, Halise ;

Wu, Jun ;

Ni, Chaoying ;

Lee, Kyung-Jin ;

Lorenz, Virginia O. ;

Xiao, John Q. .

NATURE COMMUNICATIONS, 2014, 5

[10] Scaling Study of Spin-Hall-Assisted Spin Transfer Torque Driven Magnetization Switching in the Presence of Dzyaloshinskii-Moriya Interaction [J].

Gao, Yuqian ;

Wang, Zhaohao ;

Lin, Xiaoyang ;

Kang, Wang ;

Zhang, Youguang ;

Zhao, Weisheng .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2017, 16 (06) :1138-1142

← 1 2 3 →