Critical Overcurrent Turn-Off Close to IGBT Current Saturation

被引：0

作者：

Philippou, A. ^{[1
]}

Jaeger, C. ^{[1
]}

Laven, J. G. ^{[1
]}

Baburske, R. ^{[1
]}

Schulze, H. -J. ^{[1
]}

Pfirsch, F. ^{[1
]}

Niedernostheide, F. -J. ^{[1
]}

Vellei, A. ^{[2
]}

Itani, H. ^{[2
]}

机构：

[1] Infineon Technol AG, Campeon 1-12, D-85579 Neubiberg, Germany

[2] Infineon Technol Austria AG, A-9500 Villach, Austria

来源：

2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2015年

关键词：

POWER DEVICES;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A failure mechanism in the edge termination of a 1200V IGBT during overcurrent turn-off is studied with simulations and verified by experiments. The position of the destruction in the experiment can be correlated to the formation of a critical filament in the simulation. The destruction mechanism is investigated in detail. It is only observed if the IGBT enters its current saturation regime. I.e., the IGBT survives a turn-off from the same current level for an increased gate voltage. It is shown that an IGBT provided with a properly-designed High Dynamic Ruggedness (HDR) edge termination structure [1] is no longer susceptible to the destruction mechanism.

引用

页码：113 / 116

页数：4