The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering

被引：32
作者：
Shin, Seung Wook [1 ]
Sim, Kyu Ung [1 ]
Moon, Jong-Ha [1 ]
Kim, Jin Hyeok [1 ]
机构：
[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea
来源：
CURRENT APPLIED PHYSICS | 2010年 / 10卷
关键词：
Transparent conducting oxide (TCO); Ga-doped ZnO (GZO); Processing parameters; RF magnetron sputtering; ZINC-OXIDE; SUBSTRATE-TEMPERATURE; ROOM-TEMPERATURE; TRANSPARENT; DEPOSITION; SAPPHIRE;
D O I：
10.1016/j.cap.2009.11.060
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The 3 wt% Ga-doped ZnO (G70) thin films were prepared on glass substrates by RF magnetron sputtering with different processing parameters such as RF powers, substrate temperatures and Ar working pressures Crystallinity and electrical properties of GZO films were investigated The X-ray diffraction results showed that all the GZO films were grown as a hexagonal wurtzite phase with highly c-axis preferred out-of-plane orientation The electrical properties of GZO films were strongly related to processing parameters With increasing the processing parameter values. the electrical properties of GZO films were improved up to at 350 degrees C, 200 W and 6 mTorr, above that they became worse at 400 degrees C and 7 5 mTorr The film showed the lowest resistivity of 3 45 x 10(-4) Omega cm when the film was prepared in the optimized conditions of processing parameters of 350 degrees C, 6 mTorr, and 200W (C) 2009 Elsevier B.V. All rights reserved
引用
收藏
页码：S274 / S277
页数：4
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