Development of a model for gamma-ray spectra generation using pixelated mercuric iodide detectors

被引：2
作者：
Baciak, JE [1 ]
He, Z [1 ]
机构：
[1] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA
来源：
X-RAY AND GAMMA-RAY DETECTORS AND APPLICATIONS IV | 2002年 / 4784卷
关键词：
single carrier charge sensing; room temperature; compound semiconductor; gamma-ray spectroscopy;
D O I：
10.1117/12.455979
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Recent studies have shown that pixelated HgI2 detectors with a thickness of 1 cm can yield energy resolutions of 1.4 - 2% FWHM at 662 keV gamma-ray energy, which are similar to that obtained on 3-dimensional position sensitive CdZnTe detectors of the same thickness. However, there is a need to better understand the electron transportation and induced charge from the drift of charges within the detector in order to better understand the spectra obtained from HgI2 detectors. The results of a simple simulation model accounting for electron trapping and various weighting potentials is compared with recent physical spectra obtained from pixelated HgI2 detectors of 5 mm and 10 nun thickness.
引用
收藏
页码：119 / 127
页数：9
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