ZnTe pure green light-emitting diodes fabricated by thermal diffusion

被引：87

作者：

Sato, K ^{[1
]}

Hanafusa, M ^{[1
]}

Noda, A ^{[1
]}

Arakawa, A ^{[1
]}

Uchida, M ^{[1
]}

Asahi, T ^{[1
]}

Oda, O ^{[1
]}

机构：

[1] Japan Energy Co Ltd, Cent R&D Lab, Toda, Saitama 3358502, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

ZnTe; VGF; green LED; thermal diffusion;

D O I：

10.1016/S0022-0248(00)00278-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have first succeeded in fabricating intrinsic pn-junctions and in realizing pure green ZnTe light-emitting diodes (LEDs). This success has been achieved by the growth of high-quality ZnTe single crystals with low defect densities and by the realization of n-type layers in the p-type ZnTe substrates by a thermal diffusion process. EBIC observation and I-V measurement confirmed the formation of the intrinsic pn-junction. Electroluminesence at 550 nm is visualized under room light at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1080 / 1084

页数：5

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