Theoretical and experimental investigations of zone-center optical phonons in wurtzite AlxGa1-xN using pseudo unit cell model

被引：0

作者：

Abid, M. A. ^{[1
]}

Abu Hassan, H. ^{[1
]}

Ng, S. S. ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, Minden 11800, Penang, Malaysia

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2010年 / 4卷 / 05期

关键词：

AlxGa1-xN; PUC; Phonon; Raman; FTIR; Pseudo unit cell (PUC) model; GROWTH; INGAN; FILMS; GAN;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pseudo unit cell (PUC) model was applied to investigate the phonons frequency, mode number, static dielectric constant and high frequency dielectric constant of AlxGa1-xN mixed crystals. The theoretical results were compared with experimental results obtained using Raman and Fourier transform infrared spectroscopy on samples with different mole fraction (0 <= x <= 1) grown on c-plane (0001) sapphire substrates. Theoretical results indicated that the AlxGa1-xN had only one-mode of vibration for A(1)(LO) and classified as two-mode behavior for small Al composition range in agreement with the experimental results which revealed a two-mode behavior for the E-1(TO).

引用

页码：693 / 698

页数：6

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