Interaction between a monovacancy and a vacancy cluster in silicon

被引：34

作者：

Bongiorno, A

Colombo, L

机构：

[1] Ist Nazl Fis Mat, I-20126 Milan, Italy

[2] Univ Milan, Dipartimento Sci Mat, I-20126 Milan, Italy

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.57.8767

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interaction between two vacancies has been investigated in silicon by molecular-dynamics simulations. We introduce the concept of capture radius r(c), according to which the most stable configuration for a vacancy pair is a bound divacancy whenever the two defects are placed at distances smaller than r(c). We also investigate the trapping mechanism of a monovacancy at a vacancy complex and discuss the energetics of early stages of aggregation of small vacancy clusters. [S0163-1829(98)04012-0].

引用

页码：8767 / 8769

页数：3

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