Electric field and interface fluctuation effects in CdTe/Cd1-xMnxTe strained quantum wells

被引：0
作者：
Silva, ED
Freire, JAK
da Silva, EF
机构：
[1] Univ Fed Ceara, Ctr Ciencias Exatas, Dept Fis, BR-60455900 Fortaleza, Ceara, Brazil
[2] Univ Fed Pernambuco, Dept Fis, BR-50670901 Recife, PE, Brazil
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
excitons; CdTe/CdMnTe; interfaces; Stark effect;
D O I：
10.1016/S1386-9477(02)00769-5
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The excitonic properties of CdTe/Cd1-xMnxTe strained quantum wells (QWs) are calculated taking into account interface and electric field effects. Numerical results for CdTe/Cd0.68Mn0.32 QWs show that the broadening of the exciton-related photoluminescence spectra can be as large as 30 meV in the case of interfacial fluctuations of 3 monolayers in 50 Angstrom wide strained QWs subjected to a 100 kV/cm electric field. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码：227 / 228
页数：2
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