Enhanced spin-relaxation time due to electron-electron scattering in semiconductor quantum wells

被引:75
作者
Leyland, W. J. H. [1 ]
John, G. H.
Harley, R. T.
Glazov, M. M.
Ivchenko, E. L.
Ritchie, D. A.
Farrer, I.
Shields, A. J.
Henini, M.
机构
[1] Univ Southampton, Sch Phys & Astron, Southampton SO17 1BJ, Hants, England
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[4] Toshiba Res Europe Ltd, Cambridge CB4 4WE, England
来源
PHYSICAL REVIEW B | 2007年 / 75卷 / 16期
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1103/PhysRevB.75.165309
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/Al(x)Ga(1-x)As quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature, concentration, and quantum-well-width dependencies of the spin relaxation rate of a small photoexcited electron population. A rapid enhancement of the spin lifetime with temperature up to a maximum near the Fermi temperature of the 2DEG was demonstrated experimentally. These observations are consistent with the D'yakonov-Perel' spin-relaxation mechanism controlled by electron-electron collisions. The experimental results and theoretical predictions for the spin relaxation times are in good quantitative agreement.
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页数:8
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