A 0.18μm CMOS 3-5GHz Switched Gain Low Noise Amplifier for UWB system

被引：0
|
作者：
Huang, Lu [1 ]
Feng, Lisong [1 ]
Lin, Fujiang [1 ]
机构：
[1] Univ Sci & Technol China, Dept Elect Engn, Hefei 230027, Peoples R China
来源：
2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY: SYNERGY OF RF AND IC TECHNOLOGIES, PROCEEDINGS | 2009年
关键词：
LNA; differential; feedback; switched gain;
D O I：
10.1109/RFIT.2009.5383715
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A switched gain wideband differential low noise amplifier (LNA) for the 3.1-5GHz ultra-wideband (UWB) system is presented. Techniques including serial gate peaking, load shunt peaking, RC feedback networks are used to achieve wideband input matching and large gain bandwidth. The LNA is fabricated in SMIC 0.18um 1P6M RF CMOS process. The chip is tested on FR-4 PCB board using chip-on-board package. In HG mode, measured results show a noise figure of 3.2 similar to 5.6 dB, a gain of 12.6 similar to 15.6dB, input/output return loss higher than 10/11dB and an input P1dB of -16dBm@4GHz. The DC power consumption of the core circuit is 12mW under a 1.8V supply voltage.
引用
收藏
页码：162 / 165
页数：4
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