Metal-insulator-semiconductor-insulator-metal structured titanium dioxide ultraviolet photodetector

被引：45

作者：

Wang, W. J. ^{[1
,2
]}

Shan, C. X. ^{[1
]}

Zhu, H. ^{[1
,3
]}

Ma, F. Y. ^{[2
]}

Shen, D. Z. ^{[1
]}

Fan, X. W. ^{[1
]}

Choy, K. L. ^{[4
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Zhengzhou Univ, Coll Phys Engn, Zhengzhou 450001, Peoples R China

[3] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

[4] Univ Nottingham, Sch Mech Mat & Mfg Engn, Nottingham NG7 2RD, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 04期

关键词：

SILICON;

D O I：

10.1088/0022-3727/43/4/045102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Titanium dioxide (TiO2) thin films were prepared by an atomic layer deposition technique and a metal-insulator-semiconductor-insulator-metal structured ultraviolet photodetector was fabricated from the TiO2 thin films. Meanwhile, a metal-semiconductor-metal structured photodetector was also fabricated under the same condition for comparison. By measuring their photoresponse properties, it was found that the existence of an insulation layer is effective in improving the photodetector's responsivity. The mechanism for the improvement has been attributed to the carrier multiplication occurring in the insulation layer under a high electric field.

引用

页数：4

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