Metal-insulator-semiconductor-insulator-metal structured titanium dioxide ultraviolet photodetector

被引：44

作者：

Wang, W. J. ^{[1
,2
]}

Shan, C. X. ^{[1
]}

Zhu, H. ^{[1
,3
]}

Ma, F. Y. ^{[2
]}

Shen, D. Z. ^{[1
]}

Fan, X. W. ^{[1
]}

Choy, K. L. ^{[4
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Zhengzhou Univ, Coll Phys Engn, Zhengzhou 450001, Peoples R China

[3] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

[4] Univ Nottingham, Sch Mech Mat & Mfg Engn, Nottingham NG7 2RD, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 04期

关键词：

SILICON;

D O I：

10.1088/0022-3727/43/4/045102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Titanium dioxide (TiO2) thin films were prepared by an atomic layer deposition technique and a metal-insulator-semiconductor-insulator-metal structured ultraviolet photodetector was fabricated from the TiO2 thin films. Meanwhile, a metal-semiconductor-metal structured photodetector was also fabricated under the same condition for comparison. By measuring their photoresponse properties, it was found that the existence of an insulation layer is effective in improving the photodetector's responsivity. The mechanism for the improvement has been attributed to the carrier multiplication occurring in the insulation layer under a high electric field.

引用

页数：4

共 50 条

[1] High performance metal-insulator-semiconductor-insulator-metal photodetector fabricated on a silicon-on-oxide substrate
Mikhelashvili, Vissarion
Yofis, Svetlana
Shacham, Amit
Khanonkin, Igor
Eyal, Ori
Eisenstein, Gadi
JOURNAL OF APPLIED PHYSICS, 2019, 126 (05)
[2] NEGATIVE REACTANCE OF METAL-INSULATOR-SEMICONDUCTOR-INSULATOR-METAL STRUCTURES
KOVTONYUK, NF
MAGOMEDOV, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 800 - +
[3] RADIATION DETECTION BY MEANS OF METAL-INSULATOR-SEMICONDUCTOR-INSULATOR-METAL STRUCTURES
KOVTONYUK, NF
KUPCHINSKII, OI
BOGOMOLOV, PA
MAGOMEDOV, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (01): : 135 - +
[4] OPTICAL MEMORY IN METAL-INSULATOR-SEMICONDUCTOR-INSULATOR-METAL STRUCTURES BASED ON BISMUTH TITANATE
KOVTONYUK, NF
FADIN, VG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1910 - 1911
[5] Al doped ZnO based metal-semiconductor-metal and metal-insulator-semiconductor-insulator-metal UV sensors
Singh, Shaivalini
OPTIK, 2016, 127 (07): : 3523 - 3526
[6] Plasmonic materials for metal-insulator-semiconductor-insulator-metal nanoplasmonic waveguides on silicon-on-insulator platform
Nielsen, M. P.
Ashfar, A.
Cadien, K.
Elezzabi, A. Y.
OPTICAL MATERIALS, 2013, 36 (02) : 294 - 298
[7] PHOTORESPONSE OF A METAL-INSULATOR-SEMICONDUCTOR-INSULATOR-METAL STRUCTURE IN AN ALTERNATING ELECTRIC-FIELD
AKOPYAN, RM
BRODZELI, MI
KONSTANTINOV, GD
POLYAN, RA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (07): : 841 - 843
[8] Time behavior of currents in ZnS:Mn metal-insulator-semiconductor-insulator-metal structures
Goldenblum, A.
Oprea, A.
Bogatu, V.
Journal of Applied Physics, 1994, 75 (10 pt 1):
[9] Dual-wavelength sensitive AlGaN/GaN metal-insulator-semiconductor-insulator-metal ultraviolet sensor with balanced ultraviolet/visible rejection ratios
Lee, Chang-Ju
Kwon, Young-Jin
Won, Chul-Ho
Lee, Jung-Hee
Hahm, Sung-Ho
APPLIED PHYSICS LETTERS, 2013, 103 (11)
[10] TIME BEHAVIOR OF CURRENTS IN ZNS-MN METAL-INSULATOR-SEMICONDUCTOR-INSULATOR-METAL STRUCTURES
GOLDENBLUM, A
OPREA, A
BOGATU, V
JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) : 5177 - 5185

← 1 2 3 4 5 →