Formation of Mg silicides on amorphous Si. Origin and role of high pressure in the film growth

被引：4

作者：

Dotsenko, S. A. ^{[1
,2
]}

Gouralnik, A. S. ^{[1
]}

Galkin, N. G. ^{[1
,2
]}

Galkin, K. N. ^{[1
]}

Gutakovski, A. K. ^{[3
]}

Neklyudova, M. A. ^{[3
]}

机构：

[1] Inst Automat & Control Proc, Vladivostok 690041, Russia

[2] Far Eastern Fed Univ, Dept Phys, Vladivostok 690950, Russia

[3] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk, Russia

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2014年 / 148卷 / 03期

关键词：

Inorganic compounds; Semiconductors; EELS; TEM; Phase transition;

D O I：

10.1016/j.matchemphys.2014.09.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Growth of Mg film on amorphous Si (a-Si) at room temperature in UHV conditions was studied in situ with optical differential reflection spectroscopy and electron energy loss spectroscopy. The phase composition of the film was also studied by high-resolution transmission electron microscopy. The mechanism of suicide film growth on a-Si is considered. The origin of internal stress within the growing film and its role in the silicide film growth process are discussed. Due to high pressure occurring within the growing film, the first phase to form is the hexagonal suicide phase h-Mg2Si. According to the DRS data, the phase h-Mg2Si is semiconducting. The new peak in the differential reflectance spectrum is assigned to the h-Mg2Si. At later stages of Mg deposition the cubic silicide phase c-Mg2Si grows. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：1078 / 1082

页数：5

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