Formation of Mg silicides on amorphous Si. Origin and role of high pressure in the film growth

被引：4

作者：

Dotsenko, S. A. ^{[1
,2
]}

Gouralnik, A. S. ^{[1
]}

Galkin, N. G. ^{[1
,2
]}

Galkin, K. N. ^{[1
]}

Gutakovski, A. K. ^{[3
]}

Neklyudova, M. A. ^{[3
]}

机构：

[1] Inst Automat & Control Proc, Vladivostok 690041, Russia

[2] Far Eastern Fed Univ, Dept Phys, Vladivostok 690950, Russia

[3] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk, Russia

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2014年 / 148卷 / 03期

关键词：

Inorganic compounds; Semiconductors; EELS; TEM; Phase transition;

D O I：

10.1016/j.matchemphys.2014.09.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Growth of Mg film on amorphous Si (a-Si) at room temperature in UHV conditions was studied in situ with optical differential reflection spectroscopy and electron energy loss spectroscopy. The phase composition of the film was also studied by high-resolution transmission electron microscopy. The mechanism of suicide film growth on a-Si is considered. The origin of internal stress within the growing film and its role in the silicide film growth process are discussed. Due to high pressure occurring within the growing film, the first phase to form is the hexagonal suicide phase h-Mg2Si. According to the DRS data, the phase h-Mg2Si is semiconducting. The new peak in the differential reflectance spectrum is assigned to the h-Mg2Si. At later stages of Mg deposition the cubic silicide phase c-Mg2Si grows. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：1078 / 1082

页数：5

共 23 条

[1] INITIAL INTERFACE FORMATION STUDY OF THE MG/SI(111) SYSTEM [J].

AN, KS ;

PARK, RJ ;

KIM, JS ;

PARK, CY ;

LEE, SB ;

ABUKAWA, T ;

KONO, S ;

KINOSHITA, T ;

KAKIZAKI, A ;

ISHII, T .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) :1151-1155

[2]

[Anonymous], 1984, NBS US MONOGR, V21, P86

[3] OPTICAL EVIDENCE FOR INTERFACE ELECTRONIC STATES AT AG/SI INTERFACES [J].

BORENSZTEIN, Y ;

ALAMEH, R .

SURFACE SCIENCE, 1992, 274 (01) :L509-L514

[4] MAGNESIUM COMPOUNDS - NEW DENSE PHASES [J].

CANNON, P ;

CONLIN, ET .

SCIENCE, 1964, 145 (363) :487-&

[5]

Dean J.A., 1979, Lange's Handbook of Chemistry, V12th

[6] In situ differential reflectance spectroscopy study of early stages of beta-FeSi2 silicide formation [J].

Dotsenko, Sergey Andreevich ;

Galkin, Nickolay Gennadievich ;

Gouralnik, Alexander Samuilovich ;

Koval, Ludmila Valerievna .

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2005, 3 :113-119

[7]

Dyuzheva T. I., 1976, Soviet Physics - Doklady, V21, P342

[8] A study of the temperature dependence of adsorption and silicidation kinetics at the Mg/Si(111) interface [J].

Galkin, K. N. ;

Kumar, Mahesh ;

Govind ;

Shivaprasad, S. M. ;

Korobtsov, Vv. ;

Galkin, N. G. .

THIN SOLID FILMS, 2007, 515 (22) :8192-8196

[9] Multilayer Si( 111)/Mg2Si clusters/Si heterostructures: Formation, optical and thermoelectric properties [J].

Galkin, Nickolay G. ;

Galkin, Konstantin N. ;

Vavanova, Svetlana V. .

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2005, 3 :12-20

[10] Brief observe on iron silicide growth on amorphous silicon [J].

Gouralnik, A. S. ;

Lin, Ko-Wei ;

Dotsenko, S. A. ;

Galkin, N. G. ;

Plotnikov, V. S. ;

Pustovalov, E. V. ;

Cherednichenko, A. I. ;

Vavanova, S. V. ;

Shevlyagin, A. V. ;

Gutakovski, A. K. ;

Neklyudova, M. A. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 12, 2013, 10 (12) :1742-1745

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