Lightly phosphorus-doped homoepitaxial diamond films grown by chemical vapor deposition

Lightly phosphorus-doped {111} homoepitaxial diamond films have been grown by microwave plasma-assisted chemical vapor deposition under optimized growth conditions. The Phosphorus concentration in the film can be controlled at a low doping level of the order of 10(16) cm(-3). N-type conductivity of the films with phosphorus concentrations above 1x10(16) cm(-3) is reproducibly confirmed by Hall-effect measurements in the temperature range from 300 to 873 K. The highest value of the Hall mobility at room temperature is 660 cm(2)/V s obtained for a film with a phosphorus concentration of 7x10(16) cm(-3). (C) 2004 American Institute of Physics.