Lightly phosphorus-doped homoepitaxial diamond films grown by chemical vapor deposition

被引：119

作者：

Katagiri, M

Isoya, J

Koizumi, S

Kanda, H

机构：

[1] Univ Tsukuba, Grad Sch Lib Informat & Media Studies, Tsukuba, Ibaraki 3058550, Japan

[2] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 26期

关键词：

D O I：

10.1063/1.1840119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lightly phosphorus-doped {111} homoepitaxial diamond films have been grown by microwave plasma-assisted chemical vapor deposition under optimized growth conditions. The Phosphorus concentration in the film can be controlled at a low doping level of the order of 10(16) cm(-3). N-type conductivity of the films with phosphorus concentrations above 1x10(16) cm(-3) is reproducibly confirmed by Hall-effect measurements in the temperature range from 300 to 873 K. The highest value of the Hall mobility at room temperature is 660 cm(2)/V s obtained for a film with a phosphorus concentration of 7x10(16) cm(-3). (C) 2004 American Institute of Physics.

引用

页码：6365 / 6367

页数：3

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