Structural, optical and electrical characterization of In/CdS/glass thermally annealed system

被引：37

作者：

Castillo, SJ

Mendoza-Galván, A

Ramírez-Bon, R

Espinoza-Beltrán, FJ

Sotelo-Lerma, M

González-Hernández, J

Martínez, G

机构：

[1] Univ Sonora, Ctr Invest Fis, Hermosillo 83190, Sonora, Mexico

[2] Univ Sonora, Ctr Invest Polimeros & Mat, Hermosillo 83190, Sonora, Mexico

[3] IPN, CINVESTAV, Lab Invest Mat, Queretaro 76001, Mexico

[4] Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico

来源：

THIN SOLID FILMS | 2000年 / 373卷 / 1-2期

关键词：

cadmium sulfide; indium; annealing; diffusion;

D O I：

10.1016/S0040-6090(00)01080-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical bath deposited CdS thin films coated with an evaporated indium thin film were analyzed by electrical, optical absorption, spectroscopic ellipsometry, X-ray and AFM measurements. As-deposited and thermally annealed (250-400 degreesC) samples were evaluated. Heat treatments promote the formation of an external In2O3 layer, as revealed by X-ray data. Indium atoms diffuse to the CdS layer from an intermediate indium layer. CdS doped with In with resistivities of approximately 10(-1)-10(-2) Omega /cm were obtained after annealing the In/CdS/glass system at 350 and 400 degreesC. From the ellipsometry spectra, the evolution of the initial two-layer structure, In/CdS/glass, with thermal annealing was investigated. The analysis shows a more complex structure than the In2O3/In/CdS/glass structure previously proposed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：10 / 14

页数：5

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