Generalized Two-Box Cascaded Nonlinear Behavioral Model for Radio Frequency Power Amplifiers With Strong Memory Effects

被引:17
作者
Xu, Gaoming [1 ]
Liu, Taijun [1 ]
Ye, Yan [1 ]
Xu, Tiefeng [1 ]
Wen, Huafeng [1 ]
Zhang, Xiupu [2 ]
机构
[1] Ningbo Univ, Fac Elect Engn & Comp Sci, Ningbo 315211, Zhejiang, Peoples R China
[2] Concordia Univ, Dept Elect & Comp Engn, Montreal, PQ H3G 1M8, Canada
基金
中国国家自然科学基金;
关键词
Generalized two box cascaded (GTBC) nonlinear behavioral model; Hammerstein; memory effect; memory polynomial; power amplifier (PA); POLYNOMIAL MODEL; VOLTERRA; PREDISTORTER;
D O I
10.1109/TMTT.2014.2365459
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Accurately modeling the memory effects is critical in modeling and nonlinearity pre-compensation for wideband radio frequency (RF) power amplifiers (PAs) with strong memory effects. In this paper, the memory effects are divided into two categories: lagging memory effect and leading memory effect, which are defined based on the input samples located after and before the current output samples, separately. Considering the above two types of memory effects, a generalized two-box cascaded (GTBC) nonlinear behavioral model for RF PAs with strong memory effects is proposed: one box for a static nonlinearity block that is used to include the strong static nonlinearities and the other box for a dynamic nonlinearity block which is used to predict the mild dynamic nonlinearities. The modeling accuracy of the proposed model, in terms of the normalized mean square error (NMSE) and the memory effect intensity (MEI), is compared to the generalized memory polynomial (GMP), the augmented Hammerstein (AH) and the enhanced Hammerstein (EH) models for a 450-470 MHz Doherty PA with a three-carrier WCMDA input signal and a 895-935 MHz inverse Class-F Doherty PA with a single-carrier FDD-LTE OFDM input signal. The validation demonstrates that the proposed model leads to high-accuracy with fewer modeling coefficients and floating point operations (FLOPs).
引用
收藏
页码:2888 / 2899
页数:12
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