Influence of the Li concentration on the photoluminescence spectra of neutron-irradiated silicon: Passivation of radiation induced centers.

被引：3

作者：

Rodriguez, F ^{[1
]}

Davies, G ^{[1
]}

Lightowlers, EC ^{[1
]}

机构：

[1] Univ London Kings Coll, Dept Phys, London WC2R 2LS, England

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

radiation defects; silicon; passivation; lithium; CRYSTALLINE SILICON; CARBON; LITHIUM; DEFECT; OXYGEN; COMPLEXES;

D O I：

10.4028/www.scientific.net/MSF.258-263.411

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of radiation-induced centers in irradiated Li-doped Si and the passivation of different defects are investigated through photoluminescence. It is shown that centers C and D1+D2 are efficiently passivated by Li. Besides the well known four Li associated vacancy, a new Li complex involving at least four Li atoms has been identified in Si doped with high concentrations of Li.

引用

页码：411 / 416

页数：6

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