Kinetics of atomic surface transformation during Stranski-Krastanow growth mode

被引:3
|
作者
Brunev, D. V. [1 ]
Karpov, A. N. [1 ]
Neizvestny, I. G. [1 ]
Shwartz, N. L. [1 ]
Yanovitskaya, Z. Sh. [1 ]
机构
[1] Russian Acad Sci, Inst Semicond Phys, SB, Novosibirsk 630090, Russia
基金
俄罗斯基础研究基金会;
关键词
quantum dots; epitaxy; simulation; Monte Carlo; shwoebel barrier;
D O I
10.1142/S0219581X04001456
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Using a kinetic, Monte Carlo model influence of Schwoebel barriers on morphology of growing films was investigated. With the increase of the deposited dose, transition from 2D to 3D growth mode within Stranski-Krastanow (SK) region without changing interlayer exchange and the growth parameters, was observed. The influence of interlayer atomic exchange on 2D island density, average and maximum island sizes in different atomic layers of thin film were in question. The enlargement of island sizes with the increase of the atomic layer number was demonstrated. This effect is much more pronounced in heterosystems, where atomic hops in the upper layer dominate over hops to the lower layer. The mechanism for transition from two-dimensional to three-dimensional growth mode in one growth process was suggested.
引用
收藏
页码:9 / 17
页数:9
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