Hemispherical thin-film transistor passive pixel sensors

被引：8
作者：
Yoo, Geonwook [1 ]
Fung, Tze-Ching [1 ]
Radtke, Daniela [2 ]
Stumpf, Marko
Zeitner, Uwe
Kanicki, Jerzy [1 ]
机构：
[1] Univ Michigan, Dept EECS, Ann Arbor, MI 48109 USA
[2] Fraunhofer Inst Appl Opt & Precis Engn, Microopt Syst Dept, Jena, Germany
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2010年 / 158卷 / 02期
关键词：
Thin-film transistor; Non-planar surface; Image sensor circuit; LARGE-AREA; AMORPHOUS-SILICON; FABRICATION; CIRCUITS;
D O I：
10.1016/j.sna.2009.11.019
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hemispherical image sensors are very promising technology for cameras, surveillance systems and artificial vision. We report on the electrical performance of the hydrogenated amorphous silicon thin-film transistor passive pixel image sensor (PPS) circuits fabricated on a hemispherical substrate using maskless laser-write lithography (LWL). The level-to-level registration and alignment over the curved surface with a high accuracy are demonstrated for the LWL in this work. The obtained results clearly show that it is possible to realize active-matrix PPS with a 150 mu m pixel pitch and a dynamic range of about 40 dB that is suitable for hemispherical image sensors. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：280 / 283
页数：4
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