Swift heavy ion induced optical and structural modifications in RF sputtered nanocrystalline ZnO thin film

被引:14
作者
Singh, S. K. [1 ]
Singhal, R. [1 ]
Vishnoi, R. [1 ]
Kumar, V. V. S. [2 ]
Kulariya, P. K. [2 ]
机构
[1] Malaviya Natl Inst Technol Jaipur, Dept Phys, JLN Marg, Jaipur 302017, Rajasthan, India
[2] Inter Univ Accelerator Ctr, Aruna Asaf Ali Marg, New Delhi 110067, India
关键词
ZnO thin film; Swift heavy ions; Atomic force microscopy; X-ray diffraction; ZINC-OXIDE FILMS; ELECTRICAL-PROPERTIES; AU NANOPARTICLES; RAMAN-SCATTERING; TEMPERATURE; DEPENDENCE; MATRIX; CARBON; SIZE; SPR;
D O I
10.1007/s12648-016-0950-6
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In the present study, 100 MeV Ag7+ ion beam-induced structural and optical modifications of nanocrystalline ZnO thin films are investigated. The nanocrystalline ZnO thin films are grown using radio frequency magnetron sputtering and irradiated at fluences of 3 x 10(12), 1 x 10(13) and 3 x 10(13) ions/cm(2). The incident swift heavy ions induced change in the crystallinity together with the preferential growth of crystallite size along the c axis (002) orientation. The average crystallite size is found to be increased from 10.8 +/- 0.7 to 20.5 +/- 0.3 nm with increasing the ion fluence. The Atomic force microscopy analysis confirms the variation in the surface roughness by varying the incident ion fluences. The UV-visible spectroscopy shows the decrement in transmittance of the film with ion irradiation. The micro-Raman spectra of ZnO thin films are investigated to observe ion-induced modifications which support the increased lattice defects with higher fluence. The variation in crystallinity indicates that ZnO-based devices can be used in piezoelectric transduction mechanism.
引用
收藏
页码:547 / 554
页数:8
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