The role of grown-in defects in advanced silicon technology

被引：4

作者：

Kissinger, G

Graf, D

Vanhellemont, J

Lambert, U

Richter, H

机构：

[1] Inst Semicond Phys, D-15230 Frankfurt, Germany

[2] Wacker Siltron AG, D-84479 Burghausen, Germany

来源：

SOLID STATE PHENOMENA | 1997年 / 57-8卷

关键词：

grown-in defects; oxygen precipitation; CMOS process; oxide precipitate nuclei;

D O I：

10.4028/www.scientific.net/SSP.57-58.337

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Grown-in defects are dominant in most substrate related defect generation processes in silicon. This is shown in detail for a thermally simulated CMOS process and for nucleation anneals of internal gettering procedures. The size distribution of grown-in oxide precipitate nuclei determines to a large extent if precipitation of oxygen is easy or difficult during standard precipitation tests and nucleation anneals. It also affects the number of bulk defects which are generated during CMOS processing. Here the first thermal step is of key influence for defect generation during processing.

引用

页码：337 / 342

页数：6

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