Fabrication of AZO and FAZO films using low-cost spin-coating method

This paper proposes a spin coating method to investigate the use of Al-doped ZnO (AZO) and F, Al co-doped ZnO (FAZO) films using zinc acetate as a zinc source and aluminum nitrate and ammonia fluoride as the dopant. Different processing temperatures have been conducted in-depth research on the AZO and FAZO thin film structures, morphology and photoelectric properties. The results show that for the AZO film, the intensity of the (002) diffraction peak (DP) first increases and then decreases with temperature, while the intensity of the (002) DP of the FAZO film gradually increases with temperature, effectively improving the thermal stability of the prepared AZO film. With the incorporation of F, the optimum growth of ZnO films along the c-axis perpendicular to the substrate surface is promoted, and the grain size on the film surface increases. Meanwhile, the introduction of F inhibits the generation of interstitial Zn atoms, O vacancy, and Zn vacancy; reduces the adsorption of -CO3, H2O, OH-, and O2 on the surface; and significantly improves the film stability. The optimum electrical resistivity (p) values of FAZO and AZO films prepared at 450 degrees C are 3.32 x 10-3 omega cm and 5.66 x 10-3 omega cm, respectively, and the average transmittance (TA) within the range of 380-1600 nm is 92.84% and 88.65%, respectively.