Carbon-Passivated Ni Electrodes for Charge Injection in Organic Semiconductors

被引:4
作者
Verduci, Tindara [1 ,2 ,3 ,4 ]
Yang, Cheol-Soo [5 ]
Bernard, Laetitia [6 ]
Lee, Geonhee [5 ]
Boukari, Sami [1 ]
Orgiu, Emanuele [2 ,3 ,4 ]
Samori, Paolo [2 ,3 ,4 ]
Lee, Jeong-O [5 ]
Doudin, Bernard [1 ]
机构
[1] Univ Strasbourg, CNRS 7504, Inst Phys & Chim Mat Strasbourg, 23 Rue Loess,BP 43, F-67034 Strasbourg, France
[2] Univ Strasbourg, ISIS, 8 Allee Gaspard Monge, F-67000 Strasbourg, France
[3] Univ Strasbourg, IcFRC, 8 Allee Gaspard Monge, F-67000 Strasbourg, France
[4] CNRS, 8 Allee Gaspard Monge, F-67000 Strasbourg, France
[5] Korea Res Inst Chem Technol, Adv Mat Div, Daejeon 305343, South Korea
[6] Swiss Fed Labs Mat Sci & Technol, EMPA, Dept Nanoscale Mat Sci, CH-8600 Dubendorf, Switzerland
来源
ADVANCED MATERIALS INTERFACES | 2016年 / 3卷 / 06期
关键词
carbon; charge injection; field-effect transistors; Ni electrodes; semiconducting polymers; CONTACT RESISTANCE; WORK FUNCTION; NICKEL METAL; GRAPHENE; TRANSISTORS; GROWTH; FILM; SPINTRONICS; SURFACE;
D O I
10.1002/admi.201500501
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ferromagnetic electrodes covered with ultrathin carbon films are fabricated by chemical vapor deposition and rapid thermal annealing (RTA) to grow graphene and amorphous carbon on prepatterned Ni electrodes for testing their capacity to inject charges into a p-type polymer semiconductor. Chemical and composition analysis confirms that the carbon film strongly reduces the surface oxidation of the Ni. The electrical performances measured in three-terminal devices integrating such electrodes as source and drain provide insight into the quality of the interface between ferromagnetic contact and organic semiconductor. RTA-processed electrodes exhibit the lowest interface resistance for hole injection into organic transistor devices, on par with benchmark gold electrodes. These results indicate that this approach presents an attractive strategy for the fabrication of solution-processed organic devices of potential applicability for spintronics.
引用
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页数:9
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