Field enhanced dielectronic recombination of Si11+ ions

被引：62

作者：

Bartsch, T

Muller, A

Spies, W

Linkemann, J

Danared, H

DeWitt, DR

Gao, H

Zong, W

Schuch, R

Wolf, A

Dunn, GH

Pindzola, MS

Griffin, DC

机构：

[1] UNIV STOCKHOLM,DEPT PHYS,S-10405 STOCKHOLM,SWEDEN

[2] MAX PLANCK INST KERNPHYS,D-69117 HEIDELBERG,GERMANY

[3] UNIV HEIDELBERG,INST PHYS,D-69120 HEIDELBERG,GERMANY

[4] UNIV COLORADO,JILA,BOULDER,CO 80309

[5] NATL INST STAND & TECHNOL,BOULDER,CO 80309

[6] AUBURN UNIV,DEPT PHYS,AUBURN,AL 36849

[7] ROLLINS COLL,DEPT PHYS,WINTER PK,FL 32749

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.79.2233

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The enhancement of dielectronic recombination by applied electric fields has been observed and measured for the first time in a wide range of controlled and measurable fields using multiply charged ions. The heavy ion storage ring CRYRING at Stockholm University was used to store a beam of Si11+ and collide it with a cold electron target. Rydberg resonances up to n = 25 are resolved for both the 2(p3/2) and 2(p1/2) series. The observation of a substantial monotonic increase of the rate coefficient for the group of higher Rydberg states is in puzzling disagreement with theoretical calculations of electric field enhanced dielectronic recombination.

引用

页码：2233 / 2236

页数：4

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