Effect of annealing in Zn vapor and liquid Zn on photoluminescence of high-purity polycrystalline ZnTe

被引：8

作者：

Bagaev, VS ^{[1
]}

Zaitsev, VV ^{[1
]}

Klevkov, YV ^{[1
]}

Krivobok, VS ^{[1
]}

Onishchenko, EE ^{[1
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1561519

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The photoluminescence from high-purity polycrystalline ZnTe has been studied. The evolution of the emission spectra upon annealing in Zn is analyzed. The effect of impurity aggregation is observed in the initial samples. This effect gives rise to an undulatory spectrum on the long-wavelength wing of the line associated with emission from an acceptor-bound exciton. It is demonstrated that annealing leads to homogenization of the impurity distribution, which results in the appearance of a rich structure of two-hole transitions. An analysis of these lines yields the energies of the ground and excited states of Li and Cu acceptor impurities. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：283 / 287

页数：5

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