Improved surface carrier recombination and efficiency for selective emitter N-type solar cells with Al-alloyed rear junction

被引：0
作者：
Hsu, Cheng-Yi [1 ]
Cai, Bing-Lun [2 ]
Wu, Chien-Hung [2 ]
Lin, Yuli [1 ]
机构：
[1] Chung Hua Univ, Coll Engn, Hsinchu, Taiwan
[2] Chung Hua Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2017年 / 11卷 / 3-4期
关键词：
Front surface field (FSF); Low temperature phosphosilicate glass (LTPSG); n(+) np(+) solar cell; P-TYPE; PASSIVATION;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, a fabrication process using well-arranged n(+) n/n(++) n front surface fields (FSFs) and a low temperature phosphosilicate glass (LTPSG) oxidation/etching for the emitter of n-type crystalline silicon solar cells is demonstrated. With an optimized phosphorus diffusion temperature of around 835 degrees C and a 6-min LTPSG oxidation, an effective lifetime for minority charge carriers, as long as 285.94 mu s and a high efficiency of 19.2% under AM 1.5 were obtained. This improved cell performance is attributed to the enhanced collection efficiency of excitons from FSFs and a good surface passivation from the oxidation/etching process to reduce surface recombination velocity.
引用
收藏
页码：180 / 183
页数：4
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