Strain relaxation of epitaxial (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films grown on SrTiO3 substrates by pulsed laser deposition

被引：2
|
作者：
Reddy, Y. K. Vayunandana [1 ]
Wolfmann, Jerome [1 ]
Autret-Lambert, Cecile [1 ]
Gervais, Monique [1 ]
Gervais, Francois [1 ]
机构：
[1] Univ Tours, Fac Sci & Tech, CNRS, Lab LEMA,CEA,UMR 6157, F-37200 Tours, France
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 10期
关键词：
D O I：
10.1063/1.3380528
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High crystalline quality (Ba0.6Sr0.4)(Zr0.3Ti0.7)O-3 (BSTZ) thin films were epitaxially grown by pulsed laser deposition on (001) SrTiO3 single crystal substrates. Their epitaxial nature was revealed by x-ray and electron diffraction. Thinnest film (similar to 9 nm) has largest out-of-plane lattice constant (4.135 angstrom) and tetragonality (1.06). Films are under compressive strain. Film thicknesses above similar to 9 nm were started to relax as revealed from reciprocal space mapping. Thicknesses deduced from x-ray diffraction and transmission electron microscopy methods are in good agreement. Critical thickness to relieve strain of the BSTZ film is about 7.6 +/- 0.4 nm. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3380528]
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页数：3
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