On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

被引：48

作者：

Bisi, D. ^{[1
]}

Chan, S. H. ^{[2
]}

Liu, X. ^{[3
]}

Yeluri, R. ^{[3
]}

Keller, S. ^{[3
]}

Meneghini, M. ^{[1
]}

Meneghesso, G. ^{[1
]}

Zanoni, E. ^{[1
]}

Mishra, U. K. ^{[3
]}

机构：

[1] Univ Padua, Dept Informat Engn, Via Gradenigo 6-B, I-35131 Padua, Italy

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 11期

关键词：

GENERATION; INTERFACES;

D O I：

10.1063/1.4944466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By means of combined current-voltage and capacitance-voltage sweep and transient measurements, we present the effects of forward-bias stress and charge trapping mechanisms at oxide traps in Al2O3/GaN metal-oxide-semiconductor capacitors grown in-situ by metalorganic chemical vapor deposition. Two main current-voltage regimes have been identified: a low-field regime characterized by low gate-current and low flat-band voltage instabilities, and a high-field regime triggered for oxide field greater than 3.3 MV/cm and characterized by the onset of parasitic leakage current and positive flat-band shift. In the low-voltage regime, gate current transients convey stress/relaxation kinetics based on a power-law, suggesting that tunneling trapping mechanisms occur at near-interface traps aligned with the GaN conduction-band minimum. In the high-voltage regime, devices experience parasitic conduction mechanisms and enhanced chargetrapping at oxide-traps revealed by very slow recovery transients. (C) 2016 AIP Publishing LLC.

引用

页数：5

共 26 条

[1] Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices [J].

Choi, Minseok ;

Lyons, John L. ;

Janotti, Anderson ;

Van de Walle, Chris G. .

APPLIED PHYSICS LETTERS, 2013, 102 (14)

[2] Native point defects and dangling bonds in α-Al2O3 [J].

Choi, Minseok ;

Janotti, Anderson ;

Van de Walle, Chris G. .

JOURNAL OF APPLIED PHYSICS, 2013, 113 (04)

[3] Gallium nitride based power switches for next generation of power conversion [J].

Chowdhury, Srabanti .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (05) :1066-1074

[4] CORRELATION OF STRESS-INDUCED LEAKAGE CURRENT IN THIN OXIDES WITH TRAP GENERATION INSIDE THE OXIDES [J].

DUMIN, DJ ;

MADDUX, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (05) :986-993

[5]

Ganguly S., 2011, DEV RES C DRC 2011 6, P121

[6]

Guo A, 2015, INT RELIAB PHY SYM

[7]

Heidel TD, 2014, INT EL DEVICES MEET

[8] Modeling of SILC based on electron and hole tunneling - Part I: Transient effects [J].

Ielmini, D ;

Spinelli, AS ;

Rigamonti, MA ;

Lacaita, AL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (06) :1258-1265

[9] GaN Power Transistors on Si Substrates for Switching Applications [J].

Ikeda, Nariaki ;

Niiyama, Yuki ;

Kambayashi, Hiroshi ;

Sato, Yoshihiro ;

Nomura, Takehiko ;

Kato, Sadahiro ;

Yoshida, Seikoh .

PROCEEDINGS OF THE IEEE, 2010, 98 (07) :1151-1161

[10]

Imada T., 2010, 2010 International Power Electronics Conference (IPEC - Sapporo), P1027, DOI 10.1109/IPEC.2010.5542039

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