Dependence of field-effect hole mobility of PPV-based polymer films on the spin-casting solvent

被引：93

作者：

Geens, W

Shaheen, SE

Wessling, B

Brabec, CJ

Poortmans, J

Sariciftci, NS

机构：

[1] IMEC, MCP, B-3001 Louvain, Belgium

[2] Johannes Kepler Univ, Linz Inst Organ Solar Cells, A-4040 Linz, Austria

[3] Ormecon Chem, D-22949 Ammersbek, Germany

来源：

ORGANIC ELECTRONICS | 2002年 / 3卷 / 3-4期

基金：

奥地利科学基金会;

关键词：

field-effect transistor; conjugated polymer; PPV; mobility; solvent; morphology;

D O I：

10.1016/S1566-1199(02)00039-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present field-effect mobility measurements on a conjugated polymer poly(2-methoxy-5-(3',7'-dimethyloctyloxy)1,4-phenylenevinylene) (MDMO-PPV) that was spin-cast from different solvents. The organic field-effect transistors were fabricated using an Al/p(+)-Si/SiO2/TiW/Au/MDMO-PPV configuration. The hole field-effect mobilities for MDMO-PPV deposited from a toluene and chlorobenzene solution were found to be 5 x 10(-6) and 3 x 10(-5) cm(2)/(V S), respectively, as calculated from the saturation regime. These results are explained on the basis of a modification of the polymer morphology caused by using different solvents, as evidenced by light scattering experiments on the MDMO-PPV solutions. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：105 / 110

页数：6

共 14 条

[1] Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility [J].